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    Single Wafer Epitaxial Reactor (單片式外延爐)

    應(yīng)用于半導(dǎo)體行業(yè)：

    半導(dǎo)體加工設(shè)備-外延類設(shè)備

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    NuFlare

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     HT2000FD Single Wafer Epitaxial Reactor


    HT2000FD can deposit high quality epitaxial films at a low cost, contributing in improved performance and cost reduction of power devices. TH2000F is an innovative, highly efficient and energy-saving epitaxial reactor capable of depositing films with a thickness of several micrometers to more than 150 µm continuously at a high speed by means of a vertical gas flow and high-speed wafer rotation.

     

    Realize high-speed growth of ultra-thick epi film.

    The reactor realized 8.5µm/min. of high-speed growth and less than ±1% of thickness uniformity simultaneously for 170µm of ultra-thick film.

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