高分辨率，非接觸式，接近光刻

PhableR 100系統(tǒng)基于由Eulitha AG開發(fā)的專有PHABLE（Photonics Enabler的簡稱）光刻技術(shù)，這使得可以在非接觸，鄰近光刻系統(tǒng)中印刷高分辨率周期性結(jié)構(gòu)。使用PhableR 100獲得的分辨率基本上與DUV投影光刻系統(tǒng)的相同，但沒有復(fù)雜和昂貴的光學(xué)和力學(xué)。例如，具有150nm半間距的線性光柵可以用新系統(tǒng)以高均勻性印刷。作為附加的優(yōu)點，由PhableR 100系統(tǒng)形成的圖像的實際上無限的聚焦深度意味著高分辨率圖案可以以高均勻性印刷在非平坦基板上，這在光子應(yīng)用中通常遇到。

PhableR 100系統(tǒng)可以使用工業(yè)標(biāo)準(zhǔn)鉻玻璃或相移掩模曝光直徑高達100mm的基板。掩模和襯底被手動地加載到系統(tǒng)上，并且曝光過程由機載計算機控制。可以使用可從普通供應(yīng)商獲得的標(biāo)準(zhǔn)i線光刻膠，正和負色調(diào)。線性或彎曲光柵，具有六邊形或正方形對稱性的2D光子晶體類型圖案可以印刷有小于300nm的特征周期。該系統(tǒng)也可以像接近或接觸模式中的標(biāo)準(zhǔn)掩模對準(zhǔn)器一樣使用以打印微米級結(jié)構(gòu)。目標(biāo)應(yīng)用包括光子學(xué)研究和開發(fā)項目，用于光衍射和光譜的光柵制造，LED上的光提取圖案，圖案化藍寶石襯底和濾色器。

好處

•高分辨率低于300nm間距

·全場曝光

·非接觸：保護面罩免受損壞和污染

·精確無限的焦深

·適用于非平面基板（如外延晶片）

·高均勻性

·外形對齊功能

·商業(yè)化的光刻膠和材料

·常規(guī)面罩（Cr-on-glass）

·頻率乘法

規(guī)格

分辨率10nm半間距（線性光柵）

晶圓尺寸高達100mm直徑

掩碼格式5“

照明均勻度<3％

間距范圍300nm - 3μm

抗蝕劑厚度>1μm

操作手動加載 - 自動曝光

控制觸摸面板

High resolution, non-contact, proximity photolithography

The PhableR 100 system is based on the proprietary PHABLE (short for Photonics Enabler) photolithographic technology developed by Eulitha AG, which makes it possible to print high-resolution periodic structures in a non-contact, proximity photolithography system. The resolution obtained with the PhableR 100 is essentially the same as that of a DUV projection lithography system, but without the complex and expensive optics and mechanics. For example, linear gratings with a half-pitch of 150nm can be printed with high uniformity with the new system. As an added advantage, the practically unlimited depth of focus of the image formed by the PhableR 100 system means that the high-resolution patterns can be printed with high uniformity even onto non-flat substrates, which are commonly encountered in photonics applications.

The PhableR 100 system can expose substrates with diameters up to 100mm using industry standard chrome-on-glass or phase-shifting masks. The mask and the substrate are loaded manually onto the system and the exposure process is controlled by an onboard computer. Standard i-line photoresists, both positive and negative tone, which are available from common vendors, can be used. Linear or curved gratings, 2D photonic-crystal type patterns with hexagonal or square symmetry can be printed with feature periods less than 300nm. The system may also be used like a standard mask-Aligner in either proximity or contact mode to print micron-scale structures. Targeted applications include research and development projects in photonics, fabrication of gratings for optical diffraction and spectroscopy, light extraction patterns on LEDs, patterned sapphire substrates and color filters.

BENEFITS

· High resolution below 300nm pitch

· Full-field exposure

· Non-contact: protects masks from damage and contamination

· Practically unlimited depth-of-focus

· Suitable for non-flat substrates (e.g. epi-wafers)

· High uniformity

· Overlay alignment capability

· Commercially available photoresists and materials

· Conventional mask (Cr-on-glass)

· Frequency multiplication

SPECIFICATIONS