Symbol

Parameter

Value

Units

VCES

 Collector-Emitter Voltage

1200

V

VGES

 Gate-Emitter Voltage

+30

V

IC

 Continuous Collector Current( TC=25℃)

45

A

 Continuous Collector Current ( TC=100℃)

25

A

ICM

 Pulsed Collector Current (Note 1)

80

A

IF

 Diode Continuous Forward Current( TC=100℃)

25

A

IFM

 Diode Maximum Forward Current (Note 1)

60

A

tsc

 Short Circuit Withstand Time

10

us

PD

 Maximum Power Dissipation( TC=25℃)

220

W

 Maximum Power Dissipation( TC=100℃)

100

W

TJ

 Operating Junction Temperature Range

-55 to +150

℃

TSTG

 Storage Temperature Range

-55 to +150

℃

Symbol

Parameter

Max.

Units

Rth j-c

 Thermal Resistance, Junction to case for IGBT

0.45

℃/W

Rth j-c

 Thermal Resistance, Junction to case for Diode

0.85

℃/W

Rth j-a

 Thermal Resistance, Junction to Ambient

40

℃/W

  Symbol

                         Parameter

   TestConditions

Min.

Typ.

Max.

Units

BVCES

Collector-EmitterBreakdown Voltage

VGE=0V,IC=250uA

1200

-

-

V

ICES

Collector-EmitterLeakage Current

VCE=1200V,VGE=0V

-

-

250

uA

IGES

Gate Leakage Current, Forward

VGE=30V,VCE=0V

-

-

100

nA

Gate Leakage Current, Reverse

VGE=-30V,VCE=0V

-

-

-100

nA

VGE(th)

GateThreshold Voltage

VGE=VCE,IC=250uA

4.5

-5.0

5.5

V

VCE(sat)

Collector-Emitter Saturation Voltage

VGE=15V,IC=25A

-

2.2

2.5

V

Qg

Total Gate Charge

VCC=960V

VGE=15V

IC=25A

-

130

nC

Qge

Gate-EmitterCharge

-

30

nC

Qgc

Gate-CollectorCharge

-

70

nC

td(on)

Turn-on Delay Time

VCC=600V

VGE=15V

IC=25A

RG=10W

Inductive Load

TC=25℃

-

22

-

ns

tr

Turn-on Rise Time

-

35

-

ns

td(off)

Turn-off Delay Time

-

290

-

ns

tf

Turn-off Fall Time

-

170

-

ns

Eon

Turn-on Switching Loss

-

2.2

-

mJ

Eoff

Turn-off Switching Loss

-

1.4

-

mJ

Ets

Total Switching Loss

-

3.6

-

mJ

Cies

 InputCapacitance

VCE=25V

VGE=0V

f = 1MHz

-

1250

-

pF

Coes

OutputCapacitance

-

210

-

pF

Cres

ReverseTransfer Capacitance

-

    150

-

pF

RGint

Integrated gate resistor

3.8

Ω

Symbol

                 Parameter

TestConditions

Min.

Typ.

Max.

Units

VF

DiodeForward Voltage

IF=25A

-

2.3

  2.5

V

tr r

Diode Reverse Recovery Time

VCE= 600V

IF=25A

dIF/dt = 500A/us

-

190

ns

Ir r

Diode peak Reverse Recovery Current

-

20

A

Qr r

Diode Reverse Recovery Charge

-

1600

    nC