氮化鋁厚膜晶片
性能參數(shù) (Specifications):
產(chǎn)品型號 (Item)
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AlN-T-C-C50
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尺寸 (Dimensions)
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Ф 50.8 mm ± 0.1 mm
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襯底 (Substrate)
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Sapphire (Single Side Polished)
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厚度 (Thickness)
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4 ~ 5 µm
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晶體取向 (Orientation)
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C-plane (0001) ± 1°
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導電類型
(Conduction Type)
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Semi-Insulating
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晶體質(zhì)量
(Crystalline quality)
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XRD FWHM of (0002) < 350 arcsec.
XRD FWHM of (10-12) < 450 arcsec
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邊緣排除區(qū)
(Edge Exclusion zone)
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< 2 mm
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表面粗糙度
(Surface Roughness)
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Ra < 5 nm (10 µm x 10 µm)
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包裝 (Package)
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Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere.
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* Other thickness, size can be customized
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